Manufacturer Part Number
MT53E256M16D1DS-046 WT
B
Manufacturer
Micron Technology
Introduction
The MT53E256M16D1DS-046 WT:B is a high-performance, low-power Mobile LPDDR4 SDRAM memory chip from Micron Technology. This memory module offers a large 4Gbit storage capacity, making it suitable for a wide range of mobile and embedded applications that require high-density, energy-efficient memory solutions.
Product Features and Performance
4Gbit memory capacity
SDRAM Mobile LPDDR4 technology
256M x 16 memory organization
133 GHz clock frequency
1V supply voltage
Wide operating temperature range: -30°C to 85°C
Product Advantages
High-density memory solution
Low power consumption for extended battery life
Reliable and stable performance in a wide range of operating conditions
Optimized for mobile and embedded applications
Key Reasons to Choose This Product
Cutting-edge LPDDR4 technology for superior performance
Large memory capacity to meet the demands of modern mobile devices
Excellent energy efficiency to prolong battery life
Robust and reliable operation across a wide temperature range
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Compatibility
This memory module is designed to be compatible with a variety of mobile and embedded devices that require high-performance, low-power DRAM solutions.
Application Areas
Smartphones and tablets
Laptops and ultrabooks
Automotive electronics
Industrial and IoT devices
Military and aerospace applications
Product Lifecycle
The MT53E256M16D1DS-046 WT:B is currently an active product. While there may be equivalent or alternative models available from Micron Technology or other manufacturers, it is best to contact our website's sales team for the latest product information and availability.